Philips Semiconductors

BUK6213-30A

TrenchMOS™ Intermediate level FET

Product data

Rev. 02 — 22 September 2003

9 of 13

9397 750 12028

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

03nk57

0

10

20

30

40

50

01

23

45

VGS (V)

ID

(A)

Tj = 175 °C

Tj = 25 °C

03nk55

0

2

4

6

8

10

0

1020

3040

50

QG (nC)

VGS

(V)

VDD = 14 V

VDD = 24 V

03nk54

0

25

50

75

100

0.0

0.4

0.7

1.1

1.4

VSD (V)

IS

(A)

Tj = 175 °C

Tj = 25 °C