1

Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

• Collector–Emitter Saturation Voltage —

VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc

• Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min.) BD242B

• High Current Gain — Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

• Compact TO–220 AB Package

MAXIMUM RATINGS

Rating

Symbol

BD242B

BD241C

BD242C

Unit

Collector–Emitter Voltage

VCEO

80

100

Vdc

Collector–Emitter Voltage

VCES

90

115

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

3.0

5.0

Adc

Adc

Base Current

IB

1.0

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

40

0.32

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Thermal Resistance, Junction to Case

R

θJC

3.125

_C/W

40

30

20

10

0

0

20

40

60

80

100

120

140

160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD241C/D

BD241C

BD242B

BD242C

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80, 100 VOLTS

40 WATTS

*Motorola Preferred Device

*

*

CASE 221A–09

TO–220AB

NPN

PNP