BUH51

7

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 19. Dynamic Saturation Voltage

Measurements

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

V(BR)CEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

IC(pk) = 100 mA

Inductive Switching

L = 200

µH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

RBSOA

L = 500

µH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

+15 V

1

µF

150

Ω

3 W

100

Ω

3 W

MPF930

+10 V

50

Ω

COMMON

–Voff

500

µF

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150

Ω

3 W

100

µF

Iout

A

RB1

RB2

1

µF

IC PEAK

VCE PEAK

VCE

IB

IB1

IB2

TIME

VCE

0 V

IB

90% IB

1

µs

3

µs

dyn 1

µs

dyn 3

µs

10

4

0

8

2

0

TIME

6

8

6

2

4

9

7

5

3

1

1

3

5

7

IB

IC

Vclamp

tc

tfi

90% IC

10% IC

90% IB1

10% Vclamp

tsi

TYPICAL THERMAL RESPONSE

Figure 21. Forward Bias Power Derating

1

0

160

100

20

TC, CASE TEMPERATURE (°C)

0.8

0.6

0.4

0.2

60

140

SECOND BREAKDOWN

DERATING

40

80

120

THERMAL DERATING