поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

KMM372F410CK датащи(PDF) 4 Page - Samsung semiconductor

номер детали KMM372F410CK
подробное описание детали  4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
Download  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM372F410CK датащи(HTML) 4 Page - Samsung semiconductor

  KMM372F410CK Datasheet HTML 1Page - Samsung semiconductor KMM372F410CK Datasheet HTML 2Page - Samsung semiconductor KMM372F410CK Datasheet HTML 3Page - Samsung semiconductor KMM372F410CK Datasheet HTML 4Page - Samsung semiconductor KMM372F410CK Datasheet HTML 5Page - Samsung semiconductor KMM372F410CK Datasheet HTML 6Page - Samsung semiconductor KMM372F410CK Datasheet HTML 7Page - Samsung semiconductor KMM372F410CK Datasheet HTML 8Page - Samsung semiconductor KMM372F410CK Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 20 page
background image
DRAM MODULE
KMM372F410CK/CS
KMM372F400CK/CS
CAPACITANCE (TA = 25
°C, Vcc=3.3V, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0-A11(A10), B0]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0, RAS2]
Input capacitance[CAS0, CAS4]
Input/Output capacitance[DQ0 - 71]
CIN1
CIN2
CIN3
CIN4
CDQ1
-
-
-
-
-
20
20
80
20
20
pF
pF
pF
pF
pF
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.)
Test condition : Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
90
110
ns
Read-modify-write cycle time
tRWC
131
155
ns
Access time from RAS
tRAC
50
60
ns
3,4,10
Access time from CAS
tCAC
18
20
ns
3,4,5,14
Access time from column address
tAA
30
35
ns
3,10,14
CAS to output in Low-Z
tCLZ
8
8
ns
3,14
OE to output in Low-Z
tOLZ
8
8
ns
3,14
Output buffer turn-off delay from CAS
tCEZ
8
18
8
20
ns
6,11,12,14
Transition time(rise and fall)
tT
2
50
2
50
ns
2
RAS precharge time
tRP
30
40
ns
RAS pulse width
tRAS
50
10K
60
10K
ns
RAS hold time
tRSH
18
20
ns
14
CAS hold time
tCSH
36
43
ns
14
CAS pulse width
tCAS
8
10K
10
10K
ns
13
RAS to CAS delay time
tRCD
18
32
18
40
ns
4,14
RAS to column address delay time
tRAD
13
20
13
25
ns
10,14
CAS to RAS precharge time
tCRP
10
10
ns
14
Row address set-up time
tASR
5
5
ns
14
Row address hold time
tRAH
8
8
ns
14
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
8
10
ns
Column address to RAS lead time
tRAL
30
35
ns
14
Read command set-up time
tRCS
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
ns
8
Read command hold time referenced to RAS
tRRH
-2
-2
ns
8,14
Write command hold time
tWCH
10
10
ns
Write command pulse width
tWP
10
10
ns
Write command to RAS lead time
tRWL
18
20
ns
14
Write command to CAS lead time
tCWL
8
10
ns
Data set-up time
tDS
-2
-2
ns
9,14
Data hold time
tDH
13
15
ns
9,14
Refresh period(4K Ref.)
tREF
64
64
ms
Refresh period(2K Ref.)
tREF
32
32
ms
Write command set-up time
tWCS
0
0
ns
7
CAS to W dealy time
tCWD
36
40
ns
7


Аналогичный номер детали - KMM372F410CK

производительномер деталидатащиподробное описание детали
logo
Samsung semiconductor
KMM372F213CK SAMSUNG-KMM372F213CK Datasheet
455Kb / 20P
   2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
KMM372F213CS SAMSUNG-KMM372F213CS Datasheet
455Kb / 20P
   2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
KMM372F3200BS1 SAMSUNG-KMM372F3200BS1 Datasheet
493Kb / 20P
   32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372F3200CS1 SAMSUNG-KMM372F3200CS1 Datasheet
506Kb / 20P
   32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372F3280BS1 SAMSUNG-KMM372F3280BS1 Datasheet
493Kb / 20P
   32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
More results

Аналогичное описание - KMM372F410CK

производительномер деталидатащиподробное описание детали
logo
Samsung semiconductor
KMM372V410CK SAMSUNG-KMM372V410CK Datasheet
411Kb / 19P
   4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
KMM372C410CK SAMSUNG-KMM372C410CK Datasheet
411Kb / 19P
   4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
KMM372V404BS SAMSUNG-KMM372V404BS Datasheet
417Kb / 19P
   4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
KMM372F804BS SAMSUNG-KMM372F804BS Datasheet
483Kb / 20P
   8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
KMM372V413CS SAMSUNG-KMM372V413CS Datasheet
410Kb / 19P
   4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
KMM372F213CS SAMSUNG-KMM372F213CS Datasheet
455Kb / 20P
   2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
KMM372V213CS SAMSUNG-KMM372V213CS Datasheet
408Kb / 19P
   2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
KMM5324004CK SAMSUNG-KMM5324004CK Datasheet
276Kb / 15P
   4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
KMM5324000CK SAMSUNG-KMM5324000CK Datasheet
265Kb / 15P
   4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
KMM372F3280CS1 SAMSUNG-KMM372F3280CS1 Datasheet
506Kb / 20P
   32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com