KMM372V803BK datasheet(3/18 Pages) SAMSUNG

номер детали	KMM372V803BK

подробное описание детали	8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V

Download	18 Pages

Scroll/Zoom	100%

производитель	SAMSUNG [Samsung semiconductor]

домашняя страница	http://www.samsung.com/Products/Semiconductor

Logo

3 / 18 page

DRAM MODULE

KMM372V80(8)3BK/BS

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one Fast page mode cycle time,

tPC.

* NOTE :

ABSOLUTE MAXIMUM RATINGS *

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended

periods may affect device reliability.

Item

Symbol

Rating

Unit

Voltage on any pin relative VSS

Voltage on VCC supply relative to VSS

Storage Temperature

Power Dissipation

Short Circuit Output Current

VIN, VOUT

VCC

Tstg

PD

IOS

-0.5 to +4.6

-55 to +125

9

50

V

°C

W

mA

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)

ICC1*

ICC2

ICC3*

ICC4*

ICC5

ICC6*

I(IL)

I(OL)

VOH

VOL

Symbol

Speedl

KMM372V803BK/BS

KMM372V883BK/BS

Unit

Min

Max

Min

Max

ICC1

-5

-6

-

1080

990

-

810

720

mA

ICC2

Don

′t care

-

100

-

100

mA

ICC3

-5

-6

-

1080

990

-

810

720

mA

ICC4

-5

-6

-

630

540

-

540

450

mA

ICC5

Don

′t care

-

30

-

30

mA

ICC6

-5

-6

-

1080

990

-

810

720

mA

II(L)

IO(L)

Don

′t care

-10

-5

10

5

-10

-5

10

5

uA

VOH

VOL

Don

′t care

2.4

-

0.4

2.4

-

0.4

V

: Operating Current * (RAS, CAS, Address cycling @

tRC=min)

: Standby Current (RAS=CAS=W=VIH)

: RAS Only Refresh Current * (CAS=VIH, RAS cycling @

tRC=min)

Fast Page Mode Current * (RAS=VIL, CAS cycling :

tPC=min)

: Standby Current (RAS=CAS=W=Vcc-0.2V)

: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @

tRC=min)

: Input Leakage Current (Any input 0

≤VIN≤Vcc+0.3V, all other pins not under test=0 V)

: Output Leakage Current(Data Out is disabled, 0V

≤VOUT≤Vcc)

: Output High Voltage Level (IOH = -2mA)

: Output Low Voltage Level (IOL = 2mA)

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70

°C)

*1 : VCC+1.3V at pulse width

≤15ns, which is measured at VCC.

*2 : -1.3V at pulse width

≤15ns, which is measured at VSS.

Item

Symbol

Min

Typ

Max

Unit

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

VCC

VSS

VIH

VIL

3.0

0

2.0

-0.3*2

3.3

0

-

3.6

0

VCC+0.3*1

0.8

V

Аналогичный номер детали - KMM372V803BK

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KMM372V1600BK	434Kb / 18P	16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V1600BS	434Kb / 18P	16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V1680BK	434Kb / 18P	16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V1680BS	434Kb / 18P	16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V213CK	408Kb / 19P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V

More results

Аналогичное описание - KMM372V803BK

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KMM372F883BS	469Kb / 20P	8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
	KMM372C883CS	425Kb / 20P	8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
	KMM372F804BS	483Kb / 20P	8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
	KMM372F3280CS1	506Kb / 20P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V3200CS1	457Kb / 18P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V3200CK4	458Kb / 18P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V1680BK	434Kb / 18P	16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	KMM372V3200BS1	439Kb / 18P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
	M372F3200DJ3-C	508Kb / 20P	32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
	KMM372F3280BS1	493Kb / 20P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V

More results

KMM372V803BK датащи(PDF) 3 Page - Samsung semiconductor

KMM372V803BK датащи(HTML) 3 Page - Samsung semiconductor

Аналогичный номер детали - KMM372V803BK

Аналогичное описание - KMM372V803BK

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

датащи скачать

ссылки URL