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BQ25619 датащи(PDF) 5 Page - Texas Instruments

номер детали BQ25619
подробное описание детали  BQ25619 I2C Controlled 1-Cell 1.5-A Battery Charger with 20-mA Termination and 1-A Boost Operation
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI1 - Texas Instruments

BQ25619 датащи(HTML) 5 Page - Texas Instruments

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BQ25619
www.ti.com
SLUSDF8A – JUNE 2019 – REVISED JULY 2019
Product Folder Links: BQ25619
Submit Documentation Feedback
Copyright © 2019, Texas Instruments Incorporated
Pin Functions (continued)
PIN
TYPE(1)
DESCRIPTION
NAME
NO.
QON
12
DI
BATFET enable/reset control input. When the BATFET is in ship mode, a logic LOW of tSHIPMODE
duration turns on BATFET to exit ship mode. When the BATFET is not in ship mode, a logic
LOW of tQON_RST (minimum 8 s) duration resets SYS (system power) by turning BATFET off for
tBATFET_RST (minimum 250 ms) and then re-enables BATFET to provide full system power reset.
The host chooses the BATFET reset function with VBUS unplug or not through I2C bit
BATFET_RST_WVBUS. The pin is pulled up to VBAT through 200 kΩ to maintain default HIGH
logic during ship mode. It has an internal clamp to 6.5 V.
REGN
22
P
PWM low side driver positive supply output. Internally, REGN is connected to the anode of the
boost-strap diode. Connect a 4.7-μF (10-V rating) ceramic capacitor from REGN to analog GND.
The capacitor should be placed close to the IC.
SCL
5
DI
I2C interface clock. Connect SCL to the logic rail through a 10-kΩ resistor.
SDA
6
DIO
I2C interface data. Connect SDA to the logic rail through a 10-kΩ resistor.
STAT
4
DO
Open-drain interrupt output. Connect the STAT pin to a logic rail via 10-k
Ω resistor. The STAT
pin indicates charger status.
Charge in progress: LOW
Charge complete or charger in SLEEP mode: HIGH
Charge suspend (fault response): Blink at 1 Hz
SW
19
P
Switching node connecting to output inductor. Internally SW is connected to the source of the n-
channel HSFET and the drain of the n-channel LSFET. Connect the 0.047-μF bootstrap
capacitor from SW to BTST.
20
SYS
15
P
Converter output connection point. The internal current sensing resistor is connected between
SYS and BAT. Connect a 10 µF (min) closely to the SYS pin.
16
TS
11
AI
Battery temperature qualification voltage input. Connect a negative temperature coefficient
thermistor (NTC). Program temperature window with a resistor divider from REGN to TS to
GND. Charge and boost mode suspend when TS pin voltage is out of range. When TS pin is not
used, connect a 10-kΩ resistor from REGN to TS and a 10-kΩ resistor from TS to GND or set
TS_IGNORE to HIGH to ignore TS pin. It is recommended to use a 103AT-2 thermistor.
VAC
1
AI
Input voltage sensing. This pin must be tied to VBUS.
VBUS
24
P
Charger input voltage. The internal n-channel reverse block MOSFET (RBFET) is connected
between VBUS and PMID with VBUS on source. Place a 1-uF ceramic capacitor from VBUS to
GND and place it as close as possible to IC.
Thermal Pad
P
Ground reference for the device that is also the thermal pad used to conduct heat from the
device. This connection serves two purposes. The first purpose is to provide an electrical ground
connection for the device. The second purpose is to provide a low thermal-impedance path from
the device die to the PCB. This pad should be tied externally to a ground plane.


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