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FDS6986AS датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS6986AS датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page FDS6986AS Rev A (X) Electrical Characteristics (continued) T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) Qg(TOT) Total Gate Charge, Vgs = 10V Q2 Q1 10 12 14 17 nC Qg Total Gate Charge, Vgs = 5V Q2 Q1 5.6 6.5 8 9 nC Qgs Gate-Source Charge Q2 Q1 2.0 2.3 nC Qgd Gate-Drain Charge Q2: VDS = 15 V, ID = 7.9 A Q1: VDS = 15 V, ID = 6.5 A Q2 Q1 1.5 2.1 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Q2 Q1 3.0 1.3 A Trr Reverse Recovery Time 15 ns Qrr Reverse Recovery Charge IF = 10 A, diF/dt = 300 A/µs (Note 3) Q2 6 nC Trr Reverse Recovery Time 20 ns Qrr Reverse Recovery Charge IF = 6.5 A, diF/dt = 100 A/µs (Note 3) Q1 12 nC VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) Q2 Q1 0.6 0.8 0.7 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in 2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in 2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4. FDS6986AS_NL is a lead free product. FDS6986AS_NL marking will appear on the reel label. |
Аналогичный номер детали - FDS6986AS |
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Аналогичное описание - FDS6986AS |
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