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FDS8878_NL датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8878_NL датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page June 2005 ©2005 Fairchild Semiconductor Corporation FDS8878 Rev. A1 www.fairchildsemi.com 1 FDS8878 N-Channel PowerTrench® MOSFET 30V, 10.2A, 14m Ω Features rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability Applications DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. SO-8 Branding Dash 1 5 2 3 4 4 3 2 1 5 6 7 8 |
Аналогичный номер детали - FDS8878_NL |
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Аналогичное описание - FDS8878_NL |
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