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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FDZ291P датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDZ291P датащи(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDZ291P Rev. C1 (W) Electrical CharacteristicsT A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –12 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage. VGS = ±8 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.7 –1.0 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –4.6 A VGS = –2.5 V, ID = –3.6 A VGS = –1.5 V, ID = –1.0 A VGS = –4.5 V, ID = –4.6 A, TJ=125°C 31 43 85 42 40 60 160 55 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A gFS Forward Transconductance VDS = –5 V, ID = –4.6 A 16 S Dynamic Characteristics Ciss Input Capacitance 1010 pF Coss Output Capacitance 160 pF Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz 80 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 19 ns tr Turn–On Rise Time 9 18 ns td(off) Turn–Off Delay Time 36 58 ns tf Turn–Off Fall Time VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 16 29 ns Qg Total Gate Charge 9 13 nC Qgs Gate–Source Charge 1.6 nC Qgd Gate–Drain Charge VDS = –10V, ID = –4.6 A, VGS = –4.5 V 1.9 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.4 A VSD Drain–Source Diode Forward Voltage VGS = 0V, IS = –1.4 A (Note 2) –0.7 –1.2 V trr Diode Reverse Recovery Time 17 ns Qrr Diode Reverse Recovery Charge IF = –4.6 A, dIF/dt = 100A/µs 5 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 72°C/W when mounted on a 1in 2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Аналогичный номер детали - FDZ291P |
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Аналогичное описание - FDZ291P |
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