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PHE13005X датащи(PDF) 8 Page - WeEn Semiconductors |
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PHE13005X датащи(HTML) 8 Page - WeEn Semiconductors |
8 / 14 page WeEn Semiconductors PHE13005X Silicon diffused power transistor PHE13005X Product data sheet All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 26 April 2018 8 / 13 IC / IB = 4 Fig. 10. Base-emitter saturation voltage; typical values Tj = 25 °C Fig. 11. DC current gain as a function of collector current; typical values Fig. 12. Switching times waveforms for resistive load VIM = - 6 to + 8 V; VCC = 250 V; tp = 20 μs; δ = tp / T = 0.01 RB and RL calculated from ICon and IBon requirements. Fig. 13. Test circuit for resistive load switching |
Аналогичный номер детали - PHE13005X |
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Аналогичное описание - PHE13005X |
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