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FDN304PZ датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDN304PZ
подробное описание детали  P-Channel 1.8V Specified PowerTrench MOSFET
Download  5 Pages
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN304PZ датащи(HTML) 2 Page - Fairchild Semiconductor

  FDN304PZ Datasheet HTML 1Page - Fairchild Semiconductor FDN304PZ Datasheet HTML 2Page - Fairchild Semiconductor FDN304PZ Datasheet HTML 3Page - Fairchild Semiconductor FDN304PZ Datasheet HTML 4Page - Fairchild Semiconductor FDN304PZ Datasheet HTML 5Page - Fairchild Semiconductor  
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FDN304PZ Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = –250
µA,Referenced to 25°C
–13
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS =
±8 V, V
DS = 0 V
±10
uA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.4
–0.8
–1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA,Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –2.4 A
VGS = –2.5 V,
ID = –2.0 A
VGS = –1.8V,
ID = –1.8 A
36
47
65
52
70
100
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–10
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –1.25 A
12
S
Dynamic Characteristics
Ciss
Input Capacitance
1310
pF
Coss
Output Capacitance
240
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
106
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
5.6
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
15
27
ns
tr
Turn–On Rise Time
15
27
ns
td(off)
Turn–Off Delay Time
40
64
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
25
40
ns
Qg
Total Gate Charge
12
20
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –2.4 A,
VGS = –4.5 V
2
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.42
(Note 2)
–0.6
–1.2
V
trr
Reverse Recovery Time
18
ns
Qrr
Reverse Recovery Charge
IF = –2.4 A,
diF/dt = 100 A/µs
7
nC
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250
°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%


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