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FDS3170N7 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS3170N7 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDS3170N7 Rev C1(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 6.7 A 360 mJ IAR Drain-Source Avalanche Current 6.7 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 104 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.5 4 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –6.9 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 6.7 A VGS = 6.0V, ID = 6.4 A VGS = 10 V, ID = 6.7 A,TJ = 125°C 21 22 40 26 28 52 m Ω gFS Forward Transconductance VDS = 10 V, ID = 6.7 A 37 S Dynamic Characteristics Ciss Input Capacitance 2714 pF Coss Output Capacitance 171 pF Crss Reverse Transfer Capacitance VDS = 50 V, V GS = 0 V, f = 1.0 MHz 82 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.1 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 14 26 ns tr Turn–On Rise Time 10 18 ns td(off) Turn–Off Delay Time 49 80 ns tf Turn–Off Fall Time VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 24 40 ns Qg Total Gate Charge 55 77 nC Qgs Gate–Source Charge 12 nC Qgd Gate–Drain Charge VDS = 50 V, ID = 6.7 A, VGS = 10 V 14 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.7 1.2 V tRR Reverse Recovery Time 47 ns QRR Reverse Recovery Charge IF = 6.7 A, diF/dt = 100 A/µs (Note 2) 135 nC Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%, For Repetitive Avalanche Tj must be less the 150 °C a) 40°C/W when mounted on a 1in 2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper |
Аналогичный номер детали - FDS3170N7 |
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Аналогичное описание - FDS3170N7 |
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