поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

FDS3170N7 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS3170N7
подробное описание детали  100V N-Channel PowerTrench MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS3170N7 датащи(HTML) 2 Page - Fairchild Semiconductor

  FDS3170N7 Datasheet HTML 1Page - Fairchild Semiconductor FDS3170N7 Datasheet HTML 2Page - Fairchild Semiconductor FDS3170N7 Datasheet HTML 3Page - Fairchild Semiconductor FDS3170N7 Datasheet HTML 4Page - Fairchild Semiconductor FDS3170N7 Datasheet HTML 5Page - Fairchild Semiconductor FDS3170N7 Datasheet HTML 6Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
FDS3170N7 Rev C1(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 50 V, ID= 6.7 A
360
mJ
IAR
Drain-Source Avalanche Current
6.7
A
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
VGS = 0 V,
ID = 250 µA
100
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
104
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS = ± 20 V, VDS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250 µA
2
2.5
4
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–6.9
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 6.7 A
VGS = 6.0V,
ID = 6.4 A
VGS = 10 V,
ID = 6.7 A,TJ = 125°C
21
22
40
26
28
52
m
gFS
Forward Transconductance
VDS = 10 V,
ID = 6.7 A
37
S
Dynamic Characteristics
Ciss
Input Capacitance
2714
pF
Coss
Output Capacitance
171
pF
Crss
Reverse Transfer Capacitance
VDS = 50 V,
V GS = 0 V,
f = 1.0 MHz
82
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.1
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
14
26
ns
tr
Turn–On Rise Time
10
18
ns
td(off)
Turn–Off Delay Time
49
80
ns
tf
Turn–Off Fall Time
VDD = 50 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6 Ω
24
40
ns
Qg
Total Gate Charge
55
77
nC
Qgs
Gate–Source Charge
12
nC
Qgd
Gate–Drain Charge
VDS = 50 V,
ID = 6.7 A,
VGS = 10 V
14
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.5
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.5 A
(Note 2)
0.7
1.2
V
tRR
Reverse Recovery Time
47
ns
QRR
Reverse Recovery Charge
IF = 6.7 A,
diF/dt = 100 A/µs
(Note 2)
135
nC
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%, For Repetitive Avalanche Tj must be less the 150 °C
a)
40°C/W when mounted
on a 1in
2 pad of 2 oz
copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper


Аналогичный номер детали - FDS3170N7

производительномер деталидатащиподробное описание детали
logo
First Silicon Co., Ltd
FDS3004 FS-FDS3004 Datasheet
391Kb / 3P
   HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
FDS3004A FS-FDS3004A Datasheet
360Kb / 3P
   HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
FDS3004C FS-FDS3004C Datasheet
360Kb / 3P
   HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
FDS3004S FS-FDS3004S Datasheet
360Kb / 3P
   HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
FDS3004T1G FS-FDS3004T1G Datasheet
391Kb / 3P
   HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
More results

Аналогичное описание - FDS3170N7

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDD3690 FAIRCHILD-FDD3690 Datasheet
84Kb / 5P
   100V N-Channel PowerTrench MOSFET
FDC3612 FAIRCHILD-FDC3612 Datasheet
134Kb / 5P
   100V N-Channel PowerTrench MOSFET
FDS3670 FAIRCHILD-FDS3670 Datasheet
204Kb / 8P
   100V N-Channel PowerTrench??MOSFET
FDS3680 FAIRCHILD-FDS3680 Datasheet
202Kb / 8P
   100V N-Channel PowerTrench MOSFET
FDT3612 FAIRCHILD-FDT3612 Datasheet
108Kb / 5P
   100V N-Channel PowerTrench MOSFET
FDC3616N FAIRCHILD-FDC3616N Datasheet
173Kb / 7P
   100V N-Channel PowerTrench MOSFET
FDD3680 FAIRCHILD-FDD3680 Datasheet
75Kb / 5P
   100V N-Channel PowerTrench MOSFET
FDS3680_0011 FAIRCHILD-FDS3680_0011 Datasheet
84Kb / 5P
   100V N-Channel PowerTrench MOSFET
FDD3670 FAIRCHILD-FDD3670_01 Datasheet
68Kb / 5P
   100V N-Channel PowerTrench MOSFET
FDS3670_0011 FAIRCHILD-FDS3670_0011 Datasheet
85Kb / 5P
   100V N-Channel PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5 6


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com