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FDS4410A датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS4410A датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com FDS4410A Rev. B Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Test: Pulse Width < 300µs, Duty Cycle < 2.0% Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C25 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA VDS = 24 V, VGS = 0 V, TJ = 55°C 10 IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C–5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 9 A VGS = 10 V, ID = 10 A, TJ = 125°C 9.8 12.0 13.7 13.5 20 23 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 5 V, ID = 10 A 48 S Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 1205 pF Coss Output Capacitance 290 pF Crss Reverse Transfer Capacitance 115 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.4 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 919 ns tr Turn–On Rise Time 510 ns td(off) Turn–Off Delay Time 28 44 ns tf Turn–Off Fall Time 919 ns Qg Total Gate Charge VDD = 15 V, ID = 10 A, VGS = 5 V 12 16 nC Qgs Gate–Source Charge 3.4 nC Qgd Gate–Drain Charge 4.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V trr Diode Reverse Recovery Time IF = 10A, diF/dt = 100 A/µs 24 nS Qrr Diode Reverse Recovery Charge 27 nC a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper |
Аналогичный номер детали - FDS4410A |
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Аналогичное описание - FDS4410A |
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