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FDS4435BZ датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS4435BZ датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 4 page FDS4435BZ Rev B (W) Typical Characteristics 0 10 20 30 40 50 01 234 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V -5.0V -3.5V -6.0V -4.5V -4.0V -3.0V 0.6 1 1.4 1.8 2.2 2.6 3 0 1020 30 4050 -ID, DRAIN CURRENT (A) VGS = -3.5V -4.5V -10V -5.0V -8.0V -6.0V -4.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -8.8A VGS = -10V 0 0.02 0.04 0.06 0.08 24 68 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -4.4A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 22.5 33.544.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC 25 oC -55 oC VDS = -5V 0.001 0.01 0.1 1 10 100 00.4 0.8 1.2 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Аналогичный номер детали - FDS4435BZ |
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Аналогичное описание - FDS4435BZ |
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