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FDS4435BZ датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS4435BZ датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page FDS4435BZ Rev B (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –24 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.9 –3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –8.8 A VGS = –4.5 V, ID = –6.7 A VGS = –10 V, ID = –8.8 A,TJ=125°C 16 25 23 20 35 29 m Ω gFS Forward Transconductance VDS = –5 V, ID = –8.8 A 24 S Dynamic Characteristics Ciss Input Capacitance 1365 pF Coss Output Capacitance 240 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 200 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 12 23 ns tr Turn–On Rise Time 13 24 ns td(off) Turn–Off Delay Time 68 109 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 38 61 ns Qg(TOT) Total Gate Charge, VGS = 10v 29.0 41 nC Qg(TOT) Total Gate Charge, VGS = 5v 16.5 23 nC Qgs Gate–Source Charge 4.4 nC Qgd Gate–Drain Charge VDS = –15 V, ID = –8.8 A 7.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.76 –1.2 V tRR Reverse Recovery Time 24 ns QRR Reverse Recovery Charge IF = –8.8 A, dIF/dt = 100 A/µs (Note 2) 9 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W (10 sec) 62.5°C/W steady state when mounted on a 1in 2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. |
Аналогичный номер детали - FDS4435BZ |
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Аналогичное описание - FDS4435BZ |
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