поискавой системы для электроныых деталей |
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FDS5672 датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS5672 датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page ©2005 Fairchild Semiconductor Corporation FDS5672 Rev. A www.fairchildsemi.com 3 Resistive Switching Characteristics (VGS = 10V) tON Turn-On Time VDD = 30V, ID = 12A VGS = 10V, RGS = 9.1Ω - - 50 ns td(ON) Turn-On Delay Time - 13 - ns tr Rise Time - 20 - ns td(OFF) Turn-Off Delay Time - 35 - ns tf Fall Time - 14 - ns tOFF Turn-Off Time - - 64 ns Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 12A - - 1.25 V ISD = 6A - - 1.0 V trr Reverse Recovery Time ISD=12A, dISD/dt = 100A/µs - - 39 ns QRR Reverse Recovered Charge ISD=12A, dISD/dt = 100A/µs - - 40 nC Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 22A, VDD = 60V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in 2 copper on FR-4 board. |
Аналогичный номер детали - FDS5672 |
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Аналогичное описание - FDS5672 |
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