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FDS5672 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS5672 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page ©2005 Fairchild Semiconductor Corporation FDS5672 Rev. A www.fairchildsemi.com 2 MOSFET Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current 12 A Continuous (TC = 25 oC, V GS = 10V, R θJA = 50 oC/W) Continuous (TC = 25 oC, V GS = 6V, R θJA = 50 oC/W) 10 Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 245 mJ PD Power dissipation 2.5 W Derate above 25oC 20 mW/oC TJ, TSTG Operating and Storage Temperature -55 to 150 oC Thermal Characteristics RθJC Thermal Resistance Junction to Case (Note 2) 25 oC/W RθJA Thermal Resistance Junction to Ambient at 10 seconds (Note 3) 50 oC/W RθJA Thermal Resistance Junction to Ambient at 1000 seconds (Note 3) 85 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS5672 FDS5672 SO-8 330mm 12mm 2500 units Electrical Characteristics T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 50V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 - 4 V rDS(ON) Drain to Source On Resistance ID = 12A, VGS = 10V - 0.0088 0.010 Ω ID = 10A, VGS = 6V, - 0.012 0.014 ID = 12A, VGS = 10V, TC = 150 oC - 0.016 0.023 Dynamic Characteristics CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 2200 - pF COSS Output Capacitance - 410 - pF CRSS Reverse Transfer Capacitance - 130 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.4 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 30V ID = 12A Ig = 1.0mA - 34 45 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 4.2 5.5 nC Qgs Gate to Source Gate Charge - 9.4 - nC Qgs2 Gate Charge Threshold to Plateau - 5.2 - nC Qgd Gate to Drain “Miller” Charge - 9.3 - nC |
Аналогичный номер детали - FDS5672 |
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Аналогичное описание - FDS5672 |
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