поискавой системы для электроныых деталей |
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FDS6673AZ датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6673AZ датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com April 2005 FDS6673AZ Rev. C(W) FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET Features ■ –14.5 A, –30 V. RDS(ON) = 7.2 mΩ @ VGS = –10 V RDS(ON) = 11 mΩ @ VGS = – 4.5 V ■ Extended VGSS range (–25V) for battery applications ■ ESD protection diode (note 3) ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifi- cations. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Absolute Maximum Ratings TA = 25°C unless otherwise noted Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage +25 V ID Drain Current – Continuous (Note 1a) –14.5 A – Pulsed –50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Device Marking Device Reel Size Tape width Quantity FDS6673AZ FDS6673AZ 13’’ 12mm 2500 units S D S S SO-8 D D D G 5 6 7 8 4 3 2 1 |
Аналогичный номер детали - FDS6673AZ |
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Аналогичное описание - FDS6673AZ |
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