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FDS6900AS датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS6900AS датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page FDS6900AS Rev B (X) Electrical Characteristics (continued) T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) Qg(TOT) Total Gate Charge at Vgs=10V Q2 Q1 10 11 15 15 nC Qg Total Gate Charge at Vgs=5V Q2 Q1 5.8 6.1 8.2 8.5 nC Qgs Gate–Source Charge Q2 Q1 1.6 1.7 nC Qgd Gate–Drain Charge Q2: VDS = 15 V, ID = 8.2A Q1: VDS = 15 V, ID = 6.9A Q2 Q1 2.1 2.2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Q2 Q1 2.3 1.3 A Trr Reverse Recovery Time 15 ns Qrr Reverse Recovery Charge IF = 8.2 A, diF/dt = 300 A/µs (Note 3) Q2 6 nC Trr Reverse Recovery Time 19 ns Qrr Reverse Recovery Charge IF = 6.9 A, diF/dt = 100 A/µs (Note 3) Q1 10 nC VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) VGS = 0 V, IS = 5 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) Q2 Q2 Q1 0.6 0.7 0.7 0.7 1.0 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in 2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in 2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4. FDS6900AS_NL is a lead free product. The FDS6900AS_NL marking will appear on the reel label. |
Аналогичный номер детали - FDS6900AS |
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Аналогичное описание - FDS6900AS |
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