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FDS6900AS датащи(PDF) 6 Page - Fairchild Semiconductor |
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FDS6900AS датащи(HTML) 6 Page - Fairchild Semiconductor |
6 / 10 page FDS6900AS Rev B (X) Typical Characteristics Q1 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 10V 6.0V 3.0V 3.5V 4.5V 2.5V 4.0V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 04 8 12 16 20 ID, DRAIN CURRENT (A) VGS = 3.0V 4.5V 6.0V 4.0V 10V 3.5V 5.0V Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 6.9A VGS = 10V 0.02 0.03 0.04 0.05 0.06 0.07 24 68 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 3.5A TA = 125 oC TA = 25 oC Figure 14. On-Resistance Variation with Temperature. Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 0 4 8 12 16 20 11.522.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC 25 oC -55 oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Аналогичный номер детали - FDS6900AS |
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Аналогичное описание - FDS6900AS |
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