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FDS6930B датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6930B датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com June 2005 FDS6930B Rev. A FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET Features ■ 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V ■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery pow- ered applications where low in-line power loss and fast switch- ing are required. Absolute Maximum Ratings TA = 25°C unless otherwise noted Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 5.5 A – Pulsed 20 PD Power Dissipation for Dual Operation (Note 1) 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to 150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Device Marking Device Reel Size Tape width Quantity FDS6930B FDS6930B 13" 12mm 2500 units D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 4 5 3 6 2 7 1 8 |
Аналогичный номер детали - FDS6930B |
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Аналогичное описание - FDS6930B |
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