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FDS6990AS_NL датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS6990AS_NL датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page 2 www.fairchildsemi.com FDS6990AS Rev. A Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C31 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.7 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C–3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 7.5 A VGS = 10 V, ID = 7.5 A, TJ = 125°C VGS = 4.5 V, ID = 6.5 A 17 26 21 22 35 28 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 15 V, ID = 10 A 29 S Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 550 pF Coss Output Capacitance 330 pF Crss Reverse Transfer Capacitance 60 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.1 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 816 ns tr Turn–On Rise Time 510 ns td(off) Turn–Off Delay Time 24 38 ns tf Turn–Off Fall Time 488 ns td(on) Turn–On Delay Time VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 918 ns tr Turn–On Rise Time 816 ns td(off) Turn–Off Delay Time 14 24 ns tf Turn–Off Fall Time 510 ns Qg(TOT) Total Gate Charge at Vgs = 10V VDD = 15 V, ID = 10 A, VGS = 5 V 10 14 nC Qg Total Gate Charge at Vgs = 5V 6 8 nC Qgs Gate–Source Charge 1.5 nC Qgd Gate–Drain Charge 2.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.9 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.6 0.7 V trr Diode Reverse Recovery Time IF = 10A, 18 nS Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 11 nC |
Аналогичный номер детали - FDS6990AS_NL |
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Аналогичное описание - FDS6990AS_NL |
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