поискавой системы для электроныых деталей |
|
FDS7766S датащи(PDF) 5 Page - Fairchild Semiconductor |
|
FDS7766S датащи(HTML) 5 Page - Fairchild Semiconductor |
5 / 6 page FDS7766S Rev C (W) Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7766S. Figure 12. FDS7766S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS7766). Figure 13. Non-SyncFET (FDS7766) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.00001 0.0001 0.001 0.01 0.1 0 10 20 30 VDS, REVERSE VOLTAGE (V) TA = 100 oC TA = 25 oC TA = 125 oC Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature 12.5 nS/div 12.5 nS/div |
Аналогичный номер детали - FDS7766S |
|
Аналогичное описание - FDS7766S |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |