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FDS8876_NL датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8876_NL датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page FDS8876 Rev. A www.fairchildsemi.com 2 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 12.5 A Continuous (TA = 25 oC, V GS = 10V, R θJA = 50 oC/W) Continuous (TA = 25 oC, V GS = 4.5V, R θJA = 50 oC/W) 11.4 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 105 mJ PD Power dissipation 2.5 W Derate above 25 oC20 mW/ oC TJ, TSTG Operating and Storage Temperature -55 to 150 oC RθJC Thermal Resistance, Junction to Case (Note 2) 25 oC/W RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 oC/W RθJA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDS8876 FDS8876 SO-8 330mm 12mm 2500 units FDS8876 FDS8876_NL (Note 4) SO-8 330mm 12mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TA = 150 oC- - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 12.5A, VGS = 10V - 0.0068 0.0082 Ω ID = 11.4A, VGS = 4.5V - 0.0083 0.0102 ID = 12.5A, VGS = 10V, TA = 150 oC - 0.0109 0.0141 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz -1650 - pF COSS Output Capacitance - 330 - pF CRSS Reverse Transfer Capacitance - 180 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz 0.5 2.3 4.0 Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 12.5A Ig = 1.0mA -28 36 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 15 20 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.5 2 nC Qgs Gate to Source Gate Charge - 4.3 - nC Qgs2 Gate Charge Threshold to Plateau - 2.8 - nC Qgd Gate to Drain “Miller” Charge - 5.0 - nC |
Аналогичный номер детали - FDS8876_NL |
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Аналогичное описание - FDS8876_NL |
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