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FDSS2407 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDSS2407 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 13 page December 2004 ©2004 Fairchild Semiconductor Corporation FDSS2407 Rev. A www.fairchildsemi.com 1 FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132m Ω Features 62V, 132m Ω, 5V Logic Level Gate Dual MOSFET in SO-8 5V Logic Level feedback signal of the drain to source voltage. Multiple devices can be wired “OR’d” to a single monitoring circuit input. Gate Drive Disable Input. Multiple devices controllable by a single disable transistor. Qualified to AEC Q101 Applications Automotive Injector Driver Solenoid Driver General Description This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate drive disable control function that previously required external discrete circuitry. Including these functions within the MOSFET saves printed circuit board space. The drain to source voltage feedback function provides a 5V level output whenever the drain to source voltage is above 62V. This can monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired “OR’d” together to a single input of the monitoring circuit. The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function permits a second control circuit the ability to deactivate the load if necessary. It can also be wired “OR’d” allowing multiple devices to be controlled by a single open collector / drain control transistor. SO-8 Branding Dash 1 5 2 3 4 1 2 3 4 6 5 8 7 Source 1 Gate 1 Source 2 Gate 2 Drain 1 Gate Disable Drain 2 Drain FBK Internal Diagram Pin 5 - Drain Feedback Output Pin 7 - Gate Drive Disable Input |
Аналогичный номер детали - FDSS2407 |
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Аналогичное описание - FDSS2407 |
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