поискавой системы для электроныых деталей |
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FDSS2407 датащи(PDF) 10 Page - Fairchild Semiconductor |
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FDSS2407 датащи(HTML) 10 Page - Fairchild Semiconductor |
10 / 13 page FDSS2407 Rev. A www.fairchildsemi.com 10 PSPICE Electrical Model .SUBCKT FDSS2407 2 1 3 101 102 ; rev July 2004 Ca 12 8 1e-10 Cb 15 14 4e-10 Cin 6 8 2.8e-10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD CGATE 9 20 5e-9 DDISABLE 20 101 DDISABLEMOD DFBK1 104 103 DFBK1MOD DFBK2 7 104 DFBK2MOD DFBK3 104 102 DFBK3MOD RFBK1 5 103 RFBK1MOD 13e3 RFBK2 104 7 RFBK2MOD 2.15e3 Ebreak 11 7 17 18 67.4 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 1.8e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 0.6e-9 RLgate 1 9 18 RLdrain 2 5 10 RLsource 3 7 6 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 3.5e-2 Rgate 9 20 RgateMOD 8.63e3 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 5.3e-2 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*20),3.5))} .MODEL DbodyMOD D (IS=1.1E-12 N=1.05 IKF=4e-1 RS=4.2e-2 TRS1=3e-4 TRS2=1.3e-6 + CJO=3.3e-10 TT=3e-8 M=0.38, XTI=3.5) .MODEL DbreakMOD D (RS=1 TRS1=1e-3 TRS2=-9e-6) .MODEL DplcapMOD D (CJO=1.97e-10 IS=1e-30 N=10 M=0.84) .MODEL DDISABLEMOD D (RS=30 IS=1e-15 BV=4.7 TBV1=-3e-4 TBV2=-3e-6 XTI=0) .MODEL DFBK1MOD D (IS=1e-15 BV=23.8 IKF=2 TBV1=-6e-4 TBV2=6e-6) .MODEL DFBK2MOD D (RS=1 IS=1e-30 BV=5.6 N=3.3 NBV=1) .MODEL DFBK3MOD D (RS=1 IS=1e-15 BV=4.2 NBV=2.5) .MODEL MmedMOD NMOS (VTO=1.7 KP=1.08 IS=1e-30 N=10 TOX=1 L=1u W=1u RG= 8.56e3) .MODEL MstroMOD NMOS (VTO=2 KP=14 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL MweakMOD NMOS (VTO=1.5 kp=0.04 IS=1e-30 N=10 TOX=1 L=1u W=1u RG= 8.56e4 RS=0.1) .MODEL RbreakMOD RES (TC1=1.05e-3 TC2=-9e-7) .MODEL RdrainMOD RES (TC1=9e-3 TC2=2.7e-5) .MODEL RSLCMOD RES (TC1=2e-3 TC2=6e-6) .MODEL RsourceMOD RES (TC1=3e-3 TC2=1e-6) .MODEL RvthresMOD RES (TC1=-1.1e-3 TC2=-3.3e-6) .MODEL RvtempMOD RES (TC1=-1.6e-3 TC2=1e-7) .MODEL RFBK1MOD RES (TC1=-1.4e-3 TC2=1e-6) .MODEL RFBK2MOD RES (TC1=-1.4e-3 TC2=1e-6) .MODEL RgateMOD RES (TC1=-1.4e-3 TC2=1e-5) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.0 VOFF=-3.0) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.0 VOFF=-4.0) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.0 VOFF=-0.5) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-1.0) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 101 GATE INJ FBK 102 DISABLE DDISABLE RFBK1 DFBK1 DFBK2 DFBK3 103 104 CGATE RFBK2 |
Аналогичный номер детали - FDSS2407 |
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Аналогичное описание - FDSS2407 |
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