SI7923DN datasheet(2/5 Pages) VISHAY

номер детали	SI7923DN

подробное описание детали	Dual P-Channel 30-V (D-S) MOSFET

Download	5 Pages

Scroll/Zoom	100%

производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

Logo

2 / 5 page

Si7923DN

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72622

S-51129—Rev. B, 13-Jun-05

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−1.0

−3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −30 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −30 V, VGS = 0 V, TJ = 55_C

−5

mA

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −10 V

−20

A

Drain Source On State Resistancea

rDS( )

VGS = −10 V, ID = −6.4 A

0.038

0.047

W

Drain-Source On-State Resistancea

rDS(on)

VGS = −4.5 V, ID = −5 A

0.060

0.075

W

Forward Transconductancea

gfs

VDS = −15 V, ID = −6.4 A

13

S

Diode Forward Voltagea

VSD

IS = −2.3 A, VGS = 0 V

−0.8

−1.2

V

Dynamicb

Total Gate Charge

Qg

14

21

Gate-Source Charge

Qgs

VDS = −15 V, VGS = −10 V, ID = −6.4 A

2.4

nC

Gate-Drain Charge

Qgd

3.8

Gate Resistance

Rg

8.5

W

Turn-On Delay Time

td(on)

10

15

Rise Time

tr

VDD = −15 V, RL = 15 W

12

20

Turn-Off Delay Time

td(off)

VDD = −15 V, RL = 15 W

ID ^ −1 A, VGEN = −10 V, Rg = 6 W

38

60

ns

Fall Time

tf

28

45

Source-Drain Reverse Recovery Time

trr

IF = −2.3 A, di/dt = 100 A/ms

20

40

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

4

8

12

16

20

0

1234

5

VGS = 10 thru 5 V

25_C

TC = 125_C

3 V

−55_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

4 V

Аналогичный номер детали - SI7923DN

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7923DN	211Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 20-Feb-06
	SI7923DN	541Kb / 12P	Dual P-Channel 30-V (D-S) MOSFET 01-Jan-2022
	SI7923DN	211Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 20-Feb-06
	SI7923DN	541Kb / 12P	Dual P-Channel 30-V (D-S) MOSFET 01-Jan-2022

More results

Аналогичное описание - SI7923DN

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4953DY	43Kb / 4P	Dual P-Channel 30-V(D-S) MOSFET Rev. E, 18-Aug-03
	SIA931DJ	277Kb / 9P	Dual P-Channel 30-V (D-S) MOSFET Rev. A, 13-May-13
	SI3993DV	204Kb / 10P	Dual P-Channel 30-V (D-S) MOSFET Rev. C, 02-Nov-09
	SI7997DP	482Kb / 13P	Dual P-Channel 30 V (D-S) MOSFET Rev. A, 09-Aug-10
Anachip Corp	AF4935	149Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4927DY	271Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 02-Jan-06
	SI7941DP	274Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET 31-May-04
	SI7921DN	186Kb / 5P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Jun-05
Guangdong Kexin Industr...	KI4923DY	51Kb / 2P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7945DP	207Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Feb-06
Guangdong Kexin Industr...	KI4953DY	50Kb / 2P	Dual P-Channel 30-V(D-S) MOSFET

More results

SI7923DN датащи(PDF) 2 Page - Vishay Siliconix

SI7923DN датащи(HTML) 2 Page - Vishay Siliconix

Аналогичный номер детали - SI7923DN

Аналогичное описание - SI7923DN

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL