поискавой системы для электроныых деталей |
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TSB1664CYQ датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSB1664CYQ датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page TSB1664 1-3 2003/12 rev. A TSD1664 Low Frequency NPN Transistor BVCEO = 20V Ic = 800mA VCE (SAT), = 0.15V(typ.) @Ic / Ib = 400mA / 20mA Features Low VCE (SAT). Excellent DC current gain characteristics Structure Epitaxial planar type. NPN silicon transistor Ordering Information Part No. Packing Package TSB1664CY Tape & Reel SOT-89 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 40V V Collector-Emitter Voltage VCEO 20V V Emitter-Base Voltage VEBO 5 V DC 0.8 Collector Current Pulse IC 1.5 (note 1) A 0.5 Collector Power Dissipation SOT-89 PD 2 (note 2) W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 20mS, Duty <= 50% 2. When mounted on a 40 x 40 x 0.7mm ceramic board Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10uA, IE = 0 BVCBO 40 V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 20 V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 5 V Collector Cutoff Current VCB = 20V, IE = 0 ICBO 0.5 uA Emitter Cutoff Current VEB = 4V, IC = 0 IEBO 0.5 uA Collector-Emitter Saturation Voltage IC / IB = 400mA / 20mA VCE(SAT)1 0.15 0.3 V Collector-Emitter Saturation Voltage IC / IB = 800mA / 80mA VCE(SAT)2 0.25 0.5 V DC Current Transfer Ratio VCE = 2V, IC = 0.1A hFE 82 560 Transition Frequency VCE =5V, IC=50mA, f=100MHz fT 150 MHz Output Capacitance VCB = 10V, f=1MHz Cob 20 30 pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank P Q R S Range 82 - 180 120 - 270 180 - 390 270 - 560 Pin assignment: 1. Base 2. Collector 3. Emitter |
Аналогичный номер детали - TSB1664CYQ |
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Аналогичное описание - TSB1664CYQ |
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