BDX53F datasheet(2/4 Pages) STMICROELECTRONICS

номер детали	BDX53F

подробное описание детали	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

2.08

70

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IE = 0)

VCE = 80 V

0.5

mA

ICBO

Collector Cut-off

Current (IB = 0)

VCB = 160 V

0.2

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

5mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 50 mA

160

V

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 2 A

IB =10 mA

2

V

VBE(sat)

∗ Base-emitter

Saturation Voltage

IC = 2 A

IB =10 mA

2.5

V

hFE

∗

DC Current Gain

IC = 2 A

VCE = 5 V

IC = 3 A

VCE = 5 V

500

150

VF

∗

Parallel Diode Forward

Voltage

IF = 2 A

2.5

V

hfe

∗

Small Signal Current

Gain

IC = 0.5 A

f = 1MHz

VCE = 2 V

20

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

BDX53F / BDX54F

2/4

Аналогичный номер детали - BDX53F

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	BDX53F	109Kb / 2P	isc Silicon NPN Darlington Power Transistor
Tiger Electronic Co.,Lt...	BDX53F	72Kb / 1P	Complementary Silicon Power Darlington Ttransistors
New Jersey Semi-Conduct...	BDX53F	129Kb / 2P	Silicon NPN Darlington Power Transistor
Tiger Electronic Co.,Lt...	BDX53F-E	66Kb / 1P	Complementary Silicon Power Darlington Ttransistors

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Аналогичное описание - BDX53F

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