SI7212DN datasheet(2/6 Pages) VISHAY

номер детали	SI7212DN

подробное описание детали	Dual N-Channel 30-V (D-S) MOSFET

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Si7212DN

Vishay Siliconix

www.vishay.com

2

Document Number: 73128

S-51128—Rev. B, 13-Jun-05

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

1.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 6.8 A

0.030

0.036

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 6.6 A

0.032

0.039

W

Forward Transconductancea

gfs

VDS = 10 V, ID = 6.8 A

20

S

Diode Forward Voltagea

VSD

IS = 2.2 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

7

11

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 6.8 A

2

nC

Gate-Drain Charge

Qgd

DS

GS

D

1.7

Gate Resistance

Rg

f = 1 MHz

1.5

3.0

4.5

W

Turn-On Delay Time

td(on)

10

15

Rise Time

tr

VDD = 15 V, RL = 15 W

12

20

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

30

45

ns

Fall Time

tf

g

10

15

Source-Drain Reverse Recovery Time

trr

IF = 2.2 A, di/dt = 100 A/ms

15

30

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 3 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

2 V

Аналогичный номер детали - SI7212DN

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Vishay Telefunken	SI7212DN	540Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7212DN	543Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET 01-Jan-2022
	SI7212DN-T1-E3	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
	SI7212DN-T1-GE3	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09

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Аналогичное описание - SI7212DN

производитель	номер детали	датащи	подробное описание детали
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI4276DY	304Kb / 15P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 31-May-10
	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

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