поискавой системы для электроныых деталей |
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2SC1384 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC1384 датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 s Features q Low collector to emitter saturation voltage VCE(sat). q Complementary pair with 2SA683 and 2SA684. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 5.9 ±0.2 2.54 ±0.15 0.7 ±0.1 4.9 ±0.2 0.45 +0.2 –0.1 1.27 1.27 0.45 +0.2 –0.1 13 2 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 2SC1383 2SC1384 2SC1383 2SC1384 s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 500mA *2 VCE = 5V, IB = 1A *2 IC = 500mA, IB = 50mA *2 IC = 500mA, IB = 50mA *2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 30 60 25 50 5 85 50 typ 160 100 0.2 0.85 200 11 max 0.1 340 0.4 1.2 20 Unit µA V V V V V MHz pF 2SC1383 2SC1384 2SC1383 2SC1384 *1h FE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 *2 Pulse measurement |
Аналогичный номер детали - 2SC1384 |
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Аналогичное описание - 2SC1384 |
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