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2SC3130 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC3130 датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing s Features q High transition frequency fT. q Small collector output capacitance Cob and common base reverse transfer capacitance Crb. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 10 3 50 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Base time constant Common emitter reverse transfer capacitance hFE ratio Symbol ICBO VCEO VEBO hFE * VCE(sat) fT Cob rbb' · CC Crb ∆h FE Conditions VCB = 10V, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = –5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = –5mA, f = 31.9MHz VCB = 4V, IE = 0, f = 1MHz VCE = 4V, IC = 100µA VCE = 4V, IC = 5mA min 10 3 75 1.4 0.75 typ 200 1.9 1.4 11 0.45 max 1 400 0.5 2.5 1.6 Unit µA V V V GHz pF ps pF Marking symbol : 1S *h FE Rank classification Rank P Q R hFE 75 ~ 130 110 ~ 220 200 ~ 400 Marking Symbol 1SP 1SQ 1SR |
Аналогичный номер детали - 2SC3130 |
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Аналогичное описание - 2SC3130 |
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