поискавой системы для электроныых деталей |
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2SC3743 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC3743 датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power Transistors Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Ratings 900 900 800 7 5 3 1 40 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C TC=25°C Ta=25 °C 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q Wide area of safe operation (ASO) with high breakdown voltage q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A VCE = 5V, IC = 0.1A, f = 1MHz IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A, VCC = 250V min 800 6 6 typ 4 max 50 50 0.6 1.2 1.0 4.0 1.0 Unit µA µA V V V MHz µs µs µs Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 |
Аналогичный номер детали - 2SC3743 |
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Аналогичное описание - 2SC3743 |
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