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2SD0602A датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SD0602A датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page Transistors 1 2SD0602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage V CE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. I Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Peak collector current ICP 1A Collector current IC 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C I Electrical Characteristics T a = 25°C ± 3°C Marking Symbol: X Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Marking symbol XQ XR XS X Unit: mm 0.40 +0.10 –0.05 2 1 3 (0.95) (0.95) 1.9±0.1 2.90 +0.20 –0.05 0.16 +0.10 –0.06 10 ° 1: Base JEDEC: TO-236 2: Emitter EIAJ: SC-59 3: Collector Mini Type Package Product of no-rank is not classified and have no indication for rank. Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 20 V, IE = 0 0.1 µA Collector to base voltage VCBO IC = 10 µA, I E = 060 V Collector to emitter voltage VCEO IC = 10 mA, I B = 050 V Emitter to base voltage VEBO IE = 10 µA, IC = 05 V Forward current transfer ratio * 1 hFE1 * 2 VCE = 10 V, I C = 150 mA 85 340 hFE2 VCE = 10 V, I C = 500 mA 40 Collector to emitter saturation voltage * 1 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.6 V Transition frequency fT VCB = 10 V, I E = −50 mA, f = 200 MHz 200 MHz Collector output capacitance Cob VCB = 10 V, I E = 0, f = 1 MHz 6 15 pF |
Аналогичный номер детали - 2SD0602A |
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Аналогичное описание - 2SD0602A |
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