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2SD1272 датащи(PDF) 1 Page - Panasonic Semiconductor

номер детали 2SD1272
подробное описание детали  Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio)
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производитель  PANASONIC [Panasonic Semiconductor]
домашняя страница  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1272 датащи(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD1272
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
s Features
q
High foward current transfer ratio hFE
q
Satisfactory linearity of foward current transfer ratio hFE
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
200
150
6
2.5
1
0.1
40
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCEO
hFE
*
VCE(sat)
fT
Conditions
VCB = 200V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.2A
IC = 0.5A, IB = 0.02A
VCE = 4V, IC = 0.1A, f = 10MHz
min
150
500
typ
25
max
100
100
2000
1
Unit
µA
µA
V
V
MHz
*h
FE Rank classification
Rank
Q
P
hFE
500 to 1200 800 to 2000
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
φ3.1±0.1


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