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KM68V257E-12 датащи(PDF) 6 Page - Samsung semiconductor

номер детали KM68V257E-12
подробное описание детали  32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
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производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68V257E-12 датащи(HTML) 6 Page - Samsung semiconductor

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KM68V257E/EL, KM68V257EI/ELI
CMOS SRAM
Revision 0.0
- 6 -
August 1998
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL
levels.
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to
device.
5. Transition is measured
±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)
Address
CS
tWP(2)
tDW
tDH
Valid Data
WE
Data in
Data out
tWC
tWR(5)
tAW
tCW(3)
High-Z(8)
High-Z
OE
tOHZ(6)
tAS(4)
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)
Address
CS
tWP1(2)
tDW
tDH
tOW
tWHZ(6)
Valid Data
WE
Data in
Data out
tWC
tAS(4)
tWR(5)
tAW
tCW(3)
(10)
(9)
High-Z(8)
High-Z


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