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2SD1775 датащи(PDF) 2 Page - Panasonic Semiconductor

номер детали 2SD1775
подробное описание детали  Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio)
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производитель  PANASONIC [Panasonic Semiconductor]
домашняя страница  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1775 датащи(HTML) 2 Page - Panasonic Semiconductor

  2SD1775 Datasheet HTML 1Page - Panasonic Semiconductor 2SD1775 Datasheet HTML 2Page - Panasonic Semiconductor 2SD1775 Datasheet HTML 3Page - Panasonic Semiconductor  
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2
Power Transistors
2SD1775, 2SD1775A
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
ton, tstg, tf — IC
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
40
30
10
25
35
20
5
15
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=1.3W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
I
B=3mA
T
C=25˚C
2mA
1mA
0.8mA
0.6mA
0.4mA
0.2mA
0.1mA
Collector to emitter voltage V
CE
(V)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C/IB=40
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C/IB=40
25˚C
100˚C
T
C=–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
T
C=100˚C
25˚C
–25˚C
V
CE=4V
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=12V
f=10MHz
T
C=25˚C
Collector current I
C
(A)
02.5
2.0
0.5
1.5
1.0
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=40 (IB1=–IB2)
V
CC=50V
T
C=25˚C
t
stg
t
f
t
on
Collector current I
C
(A)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25˚C
I
CP
I
C
t=10ms
1ms
300ms
Collector to emitter voltage V
CE
(V)


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