BC817-16WT1 datasheet(1/2 Pages) LRC

номер детали	BC817-16WT1

подробное описание детали	General Purpose Transistors NPN Silicon

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производитель	LRC [Leshan Radio Company]

домашняя страница	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

BC817-16WT1–1/2

1

3

2

General Purpose Transistors

Preferred Device

BC817-40YLT1 is LRC

BC817-16WT1

CASE 419-02, STYLE 2

SOT-323 (SC-70)

2

EMITT ER

3

COLLECT OR

1

B ASE

NPN Silicon

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

45

V

Collector-Base Voltage

VCBO

50

V

Emitter-Base Voltage

VEBO

5V

Collector current-continuoun

IC

500

mAdc

THERMAL CHARATEERISTICS

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

PD

225

mW

1.8

mW/oC

Thermal Resistance, Junction to Ambient

RθJA

556

oC

/W

PD

300

mW

2.4

mW/oC

Thermal Resistance, Junction to Ambient

RθJA

417

oC

/W

Junction and Storage Temperature

Tj ,Tstg

-55 to +150

oC

DEVICE MARKING

BC817-16WT1=6A

ELECTRICAL CHARACTERISTICS (TA

=25oC unless otherwise noted)

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (1)

V(BR)CEO

45

-

V

(IC=10mA)

Collector-Emitter Breakdown Voltage

V(BR)CES

50

(IC=10

µ A)

Emitter-Base Breakdown Voltage

V(BR)EBO

5

-

V

(IE=10

µ A)

Collector Cutoff Current (VCB=30V)

ICBO

-

100

nA

Emitter Cutoff Current (VBE=7V)

IEBO

100

nA

Characteristic

Total Device Dissipation

Derate above 25

oC

Rating

TA=25

oC

Derate above 25

oC

Alumina Substrate, (2) TA=25

oC

Characteristic

Аналогичный номер детали - BC817-16WT1

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BC817-16W	49Kb / 8P	NPN general purpose transistor 1999 Apr 15
Siemens Semiconductor G...	BC817-16W	90Kb / 5P	NPN Silicon AF Transistor (For general AF applications High collector current High current gain)
Infineon Technologies A...	BC817-16W	47Kb / 5P	NPN Silicon AF Transistors Nov-29-2001
Diodes Incorporated	BC817-16W	364Kb / 3P	NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR DS30575 Rev. 4 - 2
SeCoS Halbleitertechnol...	BC817-16W	263Kb / 2P	NPN Plastic Encapsulate Transistor

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Аналогичное описание - BC817-16WT1

производитель	номер детали	датащи	подробное описание детали
Leshan Radio Company	BC847BRLT1	117Kb / 3P	General Purpose Transistors(NPN Silicon)
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Comchip Technology	MMBT2222LT1	85Kb / 6P	General Purpose Transistors NPN Silicon
Leshan Radio Company	BC817-16LT1	51Kb / 2P	General Purpose Transistors(NPN Silicon)
ON Semiconductor	2N4400	303Kb / 6P	General Purpose Transistors(NPN Silicon) 1996 REV 1
ON Semiconductor	BC818-40LT1G	134Kb / 4P	General Purpose Transistors NPN Silicon August, 2009 ??Rev. 2
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