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FDS4897C датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS4897C датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page FDS4897C Rev C(W) www.fairchildsemi.com Electrical Characteristics (continued) T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) td(on) Turn-On Delay Time Q1 Q2 9 12 18 22 ns tr Turn-On Rise Time Q1 Q2 5 15 10 27 ns td(off) Turn-Off Delay Time Q1 Q2 23 45 37 72 ns tf Turn-Off Fall Time Q1 VDD = 20 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = –20 V, ID = –1 A, VGS = –10V, RGEN = 6 Ω Q1 Q2 3 18 6 32 ns Qg Total Gate Charge Q1 Q2 14 20 20 28 nC Qgs Gate-Source Charge Q1 Q2 2.4 3 nC Qgd Gate-Drain Charge Q1 VDS = 20 V, ID = 6.2 A, VGS = 10 V Q2 VDS = –20 V, ID = –4.4 A,VGS =–10 V Q1 Q2 2.8 4 nC Drain–Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) VGS = 0 V, IS = –1.3 A (Note 2) Q1 Q2 0.7 –0.7 1.2 –1.2 V trr Diode Reverse Recovery Time Q1 Q2 17 24 ns Qrr Diode Reverse Recovery Charge Q1 IF = 6.2 A, diF/dt = 100 A/µs Q2 IF = –4.4 A, diF/dt = 100 A/µs Q1 Q2 7 12 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in 2 pad of 2 oz copper b) 125°C/W when mounted on a .02 in 2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device. |
Аналогичный номер детали - FDS4897C |
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Аналогичное описание - FDS4897C |
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