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FDS6673BZ датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6673BZ датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page January 2006 ©2006 Fairchild Semiconductor Corporation FDS6673BZ Rev. B www.fairchildsemi.com 1 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8m Ω General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6.5kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant 1 7 5 2 8 4 6 3 S D S S SO-8 D D D G MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -30 V VGS Gate to Source Voltage ±25 V ID Drain Current -Continuous (Note1a) -14.5 A -Pulsed -75 A PD Power Dissipation for Single Operation (Note1a) 2.5 W (Note1b) 1.2 (Note1c) 1.0 TJ, TSTG Operating and Storage Temperature -55 to 150 °C RθJA Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance , Junction to Case (Note 1) 25 °C/W Device Marking Device Reel Size Tape Width Quantity FDS6673BZ FDS6673BZ 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS6673BZ |
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Аналогичное описание - FDS6673BZ |
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