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FDS6692A датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6692A датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page December 2005 ©2005 Fairchild Semiconductor Corporation FDS6692A Rev. A1 www.fairchildsemi.com 1 FDS6692A N-Channel PowerTrench® MOSFET 30V, 9A, 11.5m Ω Features RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability RoHS Compliant Applications DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. 1 7 5 2 8 4 6 3 S D S S SO-8 D D D G |
Аналогичный номер детали - FDS6692A |
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Аналогичное описание - FDS6692A |
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