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FDS8449 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8449 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDS8449 Rev A(W) www.fairchildsemi.com Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 3) EAS Drain-Source Avalanche Energy VDD = 40 V, ID = 7.3 A, L = 1 mH 27 mJ IAS Drain-Source Avalanche Current 7.3 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 μA 40 V ΔBVDSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C 34 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 1 1.9 3 V ΔVGS(th) ΔT J Gate Threshold Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C –5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 7.6 A VGS = 4.5 V, ID = 6.8 A VGS= 10 V, ID = 7.6 A, TJ=125°C 21 26 29 29 36 43 m Ω gFS Forward Transconductance VDS = 10 V, ID = 7.6 A 21 S Dynamic Characteristics Ciss Input Capacitance 760 pF Coss Output Capacitance 100 pF Crss Reverse Transfer Capacitance VDS = 20 V, V GS = 0 V, f = 1.0 MHz 60 pF RG Gate Resistance f = 1.0 MHz 1.2 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 9 18 ns tr Turn–On Rise Time 5 10 ns td(off) Turn–Off Delay Time 23 17 ns tf Turn–Off Fall Time VDD = 20 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 3 6 ns Qg Total Gate Charge 7.7 11 nC Qgs Gate–Source Charge 2.4 nC Qgd Gate–Drain Charge VDS = 20 V, ID = 7.6 A, VGS = 5 V 2.8 nC Drain–Source Diode Characteristics VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.76 1.2 V trr Diode Reverse Recovery Time 17 nS Qrr Diode Reverse Recovery Charge IF = 7.6 A, diF/dt = 100 A/µs 7 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in 2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2 Test: Pulse Width < 300 μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. |
Аналогичный номер детали - FDS8449 |
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Аналогичное описание - FDS8449 |
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