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FDS8690 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8690 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDS8690 Rev. B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics (Note 2) Dynamic Characteristics Switching Characteristics (Note 2) Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 34.3 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1 1.6 3 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID=250µA, referencedto 25°C - 4.5 mV/°C rDS(ON) Drain to Source On Resistance VGS = 10V, ID = 14A 6.3 7.6 m Ω VGS = 4.5V, ID = 11.5A 8.6 11.4 VGS = 10V, ID = 14A, TJ = 125°C 9.0 10.9 Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 1260 1680 pF Coss Output Capacitance 535 715 pF Crss Reverse Transfer Capacitance 80 120 pF RG Gate Resistance f = 1MHz 1.1 Ω td(on) Turn-On Delay Time VDS = 15V, ID = 1A, VGS = 10V, RGS = 6Ω 8.0 16 ns tr Rise Time 1.8 10 ns td(off) Turn-Off Delay Time 26 42 ns tf Fall Time 19 35 ns Qg Total Gate Charge VDS = 15V, VGS = 10V ID = 14A 18.8 27 nC Qg Total Gate Charge VDS = 15V, VGS = 5V ID = 14A 10 14 nC Qgs Gate to Source Gate Charge 3.5 nC Qgd Gate to Drain Charge 2.9 nC VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A 0.7 1.2 V trr Reverse Recovery Time IF = 14A, di/dt = 100A/µs45 ns Qrr Reverse Recovery Charge IF = 14A, di/dt = 100A/µs33 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. c) 125 °C/W when mounted on a minimun pad b)105 °C/W when mounted on a .04 in2 pad of 2 oz copper a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 3. Starting TJ = 25oC, L = 3mH, IAS = 11.8A , VDD = 24V, VGS = 10V. |
Аналогичный номер детали - FDS8690 |
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Аналогичное описание - FDS8690 |
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