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GS74116TJ датащи(PDF) 3 Page - GSI Technology |
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GS74116TJ датащи(HTML) 3 Page - GSI Technology |
3 / 14 page Rev: 2.02 3/2000 3/14 © 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. N GS74116TP/J/U Note: X: “H” or “L” Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. Truth Table CE OE WE LB UB DQ1 to DQ8 DQ9 to DQ16 VDD Current H X X X X Not Selected Not Selected ISB1, ISB2 L L H L L Read Read IDD L H Read High Z H L High Z Read L X L L L Write Write L H Write Not Write, High Z H L Not Write, High Z Write L H H X X High Z High Z L X X H H High Z High Z Absolute Maximum Ratings Parameter Symbol Rating Unit Supply Voltage VDD -0.5 to +4.6 V Input Voltage VIN -0.5 to VDD+0.5 ( ≤ 4.6V max.) V Output Voltage VOUT -0.5 to VDD+0.5 ( ≤ 4.6V max.) V Allowable power dissipation PD 0.7 W Storage temperature TSTG -55 to 150 oC |
Аналогичный номер детали - GS74116TJ |
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Аналогичное описание - GS74116TJ |
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