TPCA8004-H datasheet(3/7 Pages) TOSHIBA

номер детали	TPCA8004-H

подробное описание детали	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCA8004-H

2003-8-7

3

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V



±10

µA

Drain cut-OFF current

IDSS

VDS = 30 V, VGS = 0 V



10

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30



Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

15



V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.1



2.3

V

VGS = 4.5 V, ID = 20 A



4.8

6.2

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 20 A



3.5

4.6

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 20 A

40

80



S

Input capacitance

Ciss



2265



Reverse transfer capacitance

Crss



255



Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz



1045



pF

Rise time

tr



5



Turn-ON time

ton



14



Fall time

tf



11



Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 µs



50



ns

VDD ∼− 24 V, VGS = 10 V, ID = 40 A



37



Total gate charge

(gate-source plus gate-drain)

Qg

VDD ∼− 24 V, VGS = 5 V, ID = 40 A



20



Gate-source charge 1

Qgs1



8.2



Gate-drain (“miller”) charge

Qgd



8.7



Gate switch charge

QSW

VDD ∼− 24 V, VGS = 10 V, ID = 40 A



12.7



nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP



120

A

Forward voltage (diode)

VDSF

IDR = 40 A, VGS = 0 V



−1.2

V

VDD ∼− 15 V

0 V

VGS

10 V

ID = 20A

VOUT

Аналогичный номер детали - TPCA8004-H

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TPCA8004-H датащи(PDF) 3 Page - Toshiba Semiconductor

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Аналогичный номер детали - TPCA8004-H

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