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CXG1158K датащи(PDF) 1 Page - Sony Corporation

номер детали CXG1158K
подробное описание детали  Power Amplifier Module for JCDMA
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производитель  SONY [Sony Corporation]
домашняя страница  http://www.sony.co.jp
Logo SONY - Sony Corporation

CXG1158K датащи(HTML) 1 Page - Sony Corporation

  CXG1158K Datasheet HTML 1Page - Sony Corporation  
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E03511-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXG1158K
10 pin LCC (Ceramic)
Description
The CXG1158K is the power amplifier module which
operates at a single power supply. This IC is designed
using the Sony's original p-Gate HFET process.
Features
• Single power supply operation:
VDD1 = VDD2 = 3.5V (High Power Mode),
1.3V (Low Power Mode 1),
1.0V (Low Power Mode 2),
VGG = 2.7V
• Ultrasmall package: 0.06cc (6.2mm
× 6.2mm × 1.55mm)
• High efficiency:
ηadd = 41%@POUT = 27.5dBm (High Power Mode),
ηadd = 23%@POUT = 15dBm (Low Power Mode 1)
• Output power (high/low mode switching supported):
POUT = 18 to 27.5dBm: High Power Mode,
POUT = 15 to 18dBm: Low Power Mode 1,
POUT
≤ 15dBm: Low Power Mode 2
• Gain: Gp = 29dB (@900MHz)
Applications
Power amplifier for JCDMA system cellular phones
Structure
p-Gate HFET module
Absolute Maximum Ratings
• Operating ambient temperature Ta
–30 to +60
°C
• Operating case temperature
Tcase
–30 to +90
°C
• Storage temperature
Tstg
–30 to +125
°C
• Bias voltage
VDD1, VDD2
6V
• Bias voltage
VGG
3.3
V
(@VDD1 = VDD2
≤ 3.5V)
• Input power
PIN
8
dBm
Recommended Bias Voltage Conditions
• VDD1 = VDD2 = 1.0 to 4.2V
• VGG = 2.7V ± 1%
Power Amplifier Module for JCDMA
GaAs module is ESD sensitive devices. Special handling precautions are required.


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