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CXG1158K датащи(PDF) 1 Page - Sony Corporation |
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CXG1158K датащи(HTML) 1 Page - Sony Corporation |
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1 / 1 page – 1 – E03511-PS Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. CXG1158K 10 pin LCC (Ceramic) Description The CXG1158K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process. Features • Single power supply operation: VDD1 = VDD2 = 3.5V (High Power Mode), 1.3V (Low Power Mode 1), 1.0V (Low Power Mode 2), VGG = 2.7V • Ultrasmall package: 0.06cc (6.2mm × 6.2mm × 1.55mm) • High efficiency: ηadd = 41%@POUT = 27.5dBm (High Power Mode), ηadd = 23%@POUT = 15dBm (Low Power Mode 1) • Output power (high/low mode switching supported): POUT = 18 to 27.5dBm: High Power Mode, POUT = 15 to 18dBm: Low Power Mode 1, POUT ≤ 15dBm: Low Power Mode 2 • Gain: Gp = 29dB (@900MHz) Applications Power amplifier for JCDMA system cellular phones Structure p-Gate HFET module Absolute Maximum Ratings • Operating ambient temperature Ta –30 to +60 °C • Operating case temperature Tcase –30 to +90 °C • Storage temperature Tstg –30 to +125 °C • Bias voltage VDD1, VDD2 6V • Bias voltage VGG 3.3 V (@VDD1 = VDD2 ≤ 3.5V) • Input power PIN 8 dBm Recommended Bias Voltage Conditions • VDD1 = VDD2 = 1.0 to 4.2V • VGG = 2.7V ± 1% Power Amplifier Module for JCDMA GaAs module is ESD sensitive devices. Special handling precautions are required. |
Аналогичный номер детали - CXG1158K |
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Аналогичное описание - CXG1158K |
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