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N08L163WC1CT1 датащи(PDF) 4 Page - NanoAmp Solutions, Inc. |
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N08L163WC1CT1 датащи(HTML) 4 Page - NanoAmp Solutions, Inc. |
4 / 9 page Stock No. 23394-B 01/05 4 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N08L163WC1C Advance Information Note: 1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization. 2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100us. Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 1V/ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 50pF Operating Temperature -40 to +85 oC Timing Item Symbol 55 Units Min Max Read Cycle Time tRC 55 ns Address Access Time (Random Access) tAA 55 ns Chip Enable to Valid Output tCO 55 ns Output Enable to Valid Output tOE 25 ns Byte Select to Valid Output tLB, tUB 55 ns Chip Enable to Low-Z output tLZ 10 ns Output Enable to Low-Z Output tOLZ 5ns Byte Select to Low-Z Output tLBZ, tUBZ 10 ns Chip Disable to High-Z Output tHZ 20 ns Output Disable to High-Z Output tOHZ 20 ns Byte Select Disable to High-Z Output tLBHZ, tUBHZ 20 ns Output Hold from Address Change tOH 10 ns Write Cycle Time tWC 55 ns Chip Enable to End of Write tCW 40 ns Address Valid to End of Write tAW 40 ns Byte Select to End of Write tLBW, tUBW 40 ns Write Pulse Width tWP 40 ns Address Setup Time tAS 0ns Write Recovery Time tWR 0ns Write to High-Z Output tWHZ 20 ns Data to Write Time Overlap tDW 25 ns Data Hold from Write Time tDH 0 ns End Write to Low-Z Output tOW 10 ns |
Аналогичный номер детали - N08L163WC1CT1 |
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Аналогичное описание - N08L163WC1CT1 |
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