поискавой системы для электроныых деталей |
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SI4884BDY датащи(PDF) 4 Page - Vishay Siliconix |
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SI4884BDY датащи(HTML) 4 Page - Vishay Siliconix |
4 / 7 page Si4884BDY Vishay Siliconix New Product www.vishay.com 4 Document Number: 73454 S–51450—Rev. A, 01-Aug-05 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 1 ms TA = 25_C Single Pulse 10 ms 100 ms dc *Limited by rDS(on) VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 1 s 10 s 0.00 0.01 0.02 0.03 0.04 0.05 23456 789 10 1.0 1.2 0.001 10 50 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage VGS – Gate-to-Source Voltage (V) –0.9 –0.6 –0.3 0.0 0.3 0.6 –50 –25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ – Temperature (_C) 0 60 100 20 40 Time (sec) 80 110 0.1 0.01 0.001 Single Pulse Power, Junction-to-Ambient TJ = 25_C TJ = 125_C 1 0.1 0.01 ID = 10 A |
Аналогичный номер детали - SI4884BDY |
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Аналогичное описание - SI4884BDY |
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