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TDA1400 датащи(PDF) 10 Page - Tripath Technology Inc. |
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TDA1400 датащи(HTML) 10 Page - Tripath Technology Inc. |
10 / 25 page T r ip a t h T e ch n o lo gy, In c . - P r e l i m in a r y In f o r m a t i o n 10 T D A 1 40 0 – Re v. 0. 65/ K L i /0 2.0 6 (VPP). This resistor accounts for the internal VPPSENSE bias of 2.5V. Nominal resistor value should be equal to that of RVPP1. Please refer to the Over / Under- voltage Protection section in the Application Information for a detailed discussion of the internal circuit operation and external component selection. RS Over-current sense resistor. Please refer to the section, Setting the Over-current Threshold, in the Application Information for a discussion of how to choose the value of RS to obtain a specific current limit trip point. CHBR Supply decoupling for the high current Half-bridge supply pins. These components must be located as close to the output MOSFETs as possible to minimize output ringing which causes power supply overshoot. By reducing overshoot, these capacitors maximize both the TDA1400 and output MOSFET reliability. These capacitors should have good high frequency performance including low ESR and low ESL. In addition, the capacitor rating must be twice the maximum VPP voltage. Panasonic EB capacitors are ideal for the bulk storage (nominally 33uF) due to their high ripple current and high frequency design. RG Gate resistor, which is used to control the MOSFET rise/ fall times. This resistor serves to dampen the parasitics at the MOSFET gates, which, in turn, minimizes ringing and output overshoots. The typical power rating is 1/2 watt. DG Gate diode, which adds additional BBM and serves to match the unequal rise and fall times of QN and QP. An ultra-fast diode with a current rating of at least 200mA should be used. DBIAS Diode that keeps the gate capacitor biased at the proper voltage when the supply voltage decreases. CG Gate capacitor that ac-couples the TDA1400 from the high voltage MOSFETs. RISA, RISB Bias resistors for the increasing supply circuits. CISA Bias capacitor for the increasing supply circuits. QISP P-channel bipolar transistor for the circuit which charges the high side gate capacitors, CG, to VPP, in the case where the VPP supply increases in magnitude. QISN N-channel bipolar transistor for the circuit which charges the low side gate capacitors, CG, to VNN, in the case where the VNN supply increases in magnitude. CZ Zobel capacitor, which in conjunction with RZ, terminates the output filter at high frequencies. Use a high quality film capacitor capable of sustaining the ripple current caused by the switching outputs. QP P-channel power-MOSFET of the output stage. QN N-channel power-MOSFET of the output stage. RZ Zobel resistor, which in conjunction with CZ, terminates the output filter at high frequencies. The combination of RZ and CZ minimizes peaking of the output filter under both no load conditions or with real world loads, including loudspeakers which usually exhibit a rising impedance with increasing frequency. Depending on the program material, the power rating of RZ may need to be adjusted. The typical power rating is 2 watts. LO Output inductor, which in conjunction with CO, demodulates (filters) the switching waveform into an audio signal. Forms a second order filter with a cutoff frequency of ) C L 2 ( 1 f O O C π = and a quality factor of O O O L C L C R Q = . CO Output capacitor, which, in conjunction with LO, demodulates (filters) the switching waveform into an audio signal. Forms a second order low-pass filter with a cutoff frequency of ) C L 2 ( 1 f O O C π = and a quality factor of O O L C R Q C L 2 O = . Use a high quality film capacitor capable of sustaining the ripple current caused by the switching outputs. DDS These diodes must be connected from either the drain of the p-channel MOSFET to the source of the n-channel MOSFET, or the source of the p-channel MOSFET to the drain of the n-channel MOSFET This diode absorbs any high frequency overshoots caused by the output inductor LO during high output current conditions. In order for this diode to be effective it must be connected directly to the two MOSFETs. An ultra-fast recovery diode that can sustain the entire supply voltage should be used here. In most applications a 100V or greater diode must be used. RGS Resistor that turns QN and QP off when no signal is present. RFLT Pull-down resistor for the open-drain Fault circuit. |
Аналогичный номер детали - TDA1400 |
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Аналогичное описание - TDA1400 |
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