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SHD224701 датащи(PDF) 1 Page - Sensitron

номер детали SHD224701
подробное описание детали  LOW RDS HERMETIC POWER MOSFET - N-CHANNEL
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производитель  SENSITRON [Sensitron]
домашняя страница  http://www.sensitron.com
Logo SENSITRON - Sensitron

SHD224701 датащи(HTML) 1 Page - Sensitron

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•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4151, REV. B
LOW RDS HERMETIC POWER MOSFET - N-CHANNEL
FEATURES:
100 Volt, 0.011 Ohm, 90A MOSFET for Glidcop version
Isolated Hermetic Metal Package
Ultra Low R
DS (on)
Ceramic Seals with Glidcop leads (SHDCG224701)
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25
°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
ID25
-
-
70*
Amps
PULSED DRAIN CURRENT
IDM
-
-
240
Amps
OPERATING AND STORAGE TEMPERATURE
TJ/TSTG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION
PD
-
-
210
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
RθJC
-
-
0.6
°C/W
Note: * current limited by package; die rating is 90A
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250µA
BVDSS
100
-
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 30A
RDS(ON)
Glidcop
Version
-
0.011
0.013
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 30A
RDS(ON)
Standard
Version
-
0.013
0.015
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250µA
VGS(th)
2
-
4
Volts
FORWARD TRANSCONDUCTANCE
VDS = 15V, ID = 30A
gfs
25
-
-
S(1/
Ω)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C
TJ = 125°C
IDSS
-
-
1
50
µA
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
IGSS
-
-
100
-100
nA
TURN ON DELAY TIME
VDD = 50V
RISE TIME
ID = 55A
TURN OFF DELAY TIME
VGS=10V
FALL TIME
RG = 2.5Ω
td(ON)
tr
td(OFF)
tf
-
20
110
65
100
30
170
100
150
nsec
DIODE FORWARD VOLTAGE
IF = 30A, VGS = 0V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
VSD
-
1.0
1.2
Volts
REVERSE RECOVERY TIME
TJ = 25°C,
IF=30A, VR = 100V
di/dt = 100A/
µsec
trr
-
70
140
nsec
INPUT CAPACITANCE
VGS = 0 V,
OUTPUT CAPACITANCE
VDS = 25 V,
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
Ciss
Coss
Crss
-
8700
740
450
-
pF
SHD224701
SHDCG224701


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